Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0032 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 6.5 W
Technical parameters/threshold voltage: 1.2 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 19 ns
Technical parameters/Input capacitance (Ciss): 2730pF @15V(Vds)
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4170DY-T1-GE3
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SI4712DY-T1-GE3
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