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Model SI4712DY-T1-GE3
Description NChannel 30-V (D-S) MOSFET and Schottky diode N-Channel 30-V (D-S) MOSFET with Schottky diode
Product QR code
Brand: VISHAY
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.12  yuan 2.12yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2366) Minimum order quantity(1)
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Technical parameters/drain source resistance:

13 mΩ

 

Technical parameters/polarity:

N-CH

 

Technical parameters/dissipated power:

2.5 W

 

Technical parameters/threshold voltage:

2.5 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

14.6A

 

Technical parameters/Input capacitance (Ciss):

1084pF @15V(Vds)

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

5 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Length:

5 mm

 

Dimensions/Width:

4 mm

 

Dimensions/Height:

1.55 mm

 

Dimensions/Packaging:

SOIC-8

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Minimum Packaging:

2500

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4166DY-T1-GE3 SI4166DY-T1-GE3 Vishay Siliconix 功能相似 SOIC-8
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SI4166DY-T1-GE3 SI4166DY-T1-GE3 VISHAY 功能相似 SOIC-8
Single N-Channel 30V 3.9mOhm 6.5W Surface Mount Power Mosfet - SOIC-8
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