Technical parameters/drain source resistance: | 0.0032 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 6.5 W |
|
Technical parameters/threshold voltage: | 1.2 V |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Input capacitance (Ciss): | 2730pF @15V(Vds) |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 3W (Ta), 6.5W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Packaging: | SOIC-8 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2014/06/16 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4170DY-T1-GE3
|
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SI4712DY-T1-GE3
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Vishay Siliconix | 功能相似 | SO-8 |
MOSFET N-CH 30V 14.6A 8SOIC
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SI4712DY-T1-GE3
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VISHAY | 功能相似 | SOIC-8 |
MOSFET N-CH 30V 14.6A 8SOIC
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SI4712DY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
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