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Model SI4712DY-T1-GE3
Description N Channel MOSFET with integrated Schottky (SkyFET) ®)， Vishay Semiconductor MOSFET transistor, Vishay Semiconductor
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.86  yuan 1.86yuan
5+:
$ 2.5110
25+:
$ 2.3250
50+:
$ 2.1948
100+:
$ 2.1390
500+:
$ 2.1018
2500+:
$ 2.0553
5000+:
$ 2.0367
10000+:
$ 2.0088
Quantity
5+
25+
50+
100+
500+
Price
$2.5110
$2.3250
$2.1948
$2.1390
$2.1018
Price $ 2.5110 $ 2.3250 $ 2.1948 $ 2.1390 $ 2.1018
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5195) Minimum order quantity(5)
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Technical parameters/drain source resistance: 0.013 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2.5 W

Technical parameters/threshold voltage: 2.5 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 14.6 A

Technical parameters/Input capacitance (Ciss): 1084pF @15V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 5 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/length: 5 mm

External dimensions/width: 4 mm

External dimensions/height: 1.55 mm

External dimensions/packaging: SOIC

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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SI4166DY-T1-GE3 SI4166DY-T1-GE3 VISHAY 功能相似 SOIC-8
Single N-Channel 30V 3.9mOhm 6.5W Surface Mount Power Mosfet - SOIC-8
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