Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 750mW (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 3.77 A
Technical parameters/dissipated power (Max): 750mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Intertechnology | 类似代替 |
Trans MOSFET N-CH 20V 3.77A 3Pin TO-236 T/R
|
|||
SI2314EDS-T1-E3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
Trans MOSFET N-CH 20V 3.77A 3Pin TO-236 T/R
|
||
SI2314EDS-T1-E3
|
Vishay Semiconductor | 类似代替 | TO-236 |
Trans MOSFET N-CH 20V 3.77A 3Pin TO-236 T/R
|
||
SI2314EDS-T1-E3
|
VISHAY | 类似代替 | SOT-23-3 |
Trans MOSFET N-CH 20V 3.77A 3Pin TO-236 T/R
|
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