Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.033 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 750 mW
Technical parameters/threshold voltage: 950 mV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20.0 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 4.90 A
Technical parameters/rise time: 1400 ns
Technical parameters/descent time: 5900 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 750 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-236
External dimensions/height: 1.02 mm
External dimensions/packaging: TO-236
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Portable Devices, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Siliconix | 功能相似 | SOT-23 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
||
SI2314EDS-T1-GE3
|
VISHAY | 类似代替 | SOT-23-3 |
Trans MOSFET N-CH 20V 3.77A 3Pin SOT-23 T/R
|
||
SI2314EDS-T1-GE3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
Trans MOSFET N-CH 20V 3.77A 3Pin SOT-23 T/R
|
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