Technical parameters/drain source resistance: 33 mΩ
Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 4.9A
Technical parameters/rise time: 1400 ns
Technical parameters/descent time: 5900 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 750mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Intertechnology | 类似代替 |
Trans MOSFET N-CH 20V 3.77A 3Pin TO-236 T/R
|
|||
SI2314EDS-T1-E3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
Trans MOSFET N-CH 20V 3.77A 3Pin TO-236 T/R
|
||
SI2314EDS-T1-E3
|
Vishay Semiconductor | 类似代替 | TO-236 |
Trans MOSFET N-CH 20V 3.77A 3Pin TO-236 T/R
|
||
SI2314EDS-T1-E3
|
VISHAY | 类似代替 | SOT-23-3 |
Trans MOSFET N-CH 20V 3.77A 3Pin TO-236 T/R
|
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