Technical parameters/drain source resistance: 33 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 750 mW
Technical parameters/threshold voltage: 950 mV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20.0 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 4.90 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 750mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Siliconix | 功能相似 | SOT-23 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
||
SI2314EDS-T1-GE3
|
VISHAY | 类似代替 | SOT-23-3 |
Trans MOSFET N-CH 20V 3.77A 3Pin SOT-23 T/R
|
||
SI2314EDS-T1-GE3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
Trans MOSFET N-CH 20V 3.77A 3Pin SOT-23 T/R
|
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