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Model SI2331DS-T1-E3
Description MOSFET P-CH 12V 3.2A SOT23-3
Product QR code
Brand: Vishay Siliconix
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4760) Minimum order quantity(1)
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Technical parameters/dissipated power: 710mW (Ta)

Technical parameters/drain source voltage (Vds): 12 V

Technical parameters/Input capacitance (Ciss): 780pF @6V(Vds)

Technical parameters/dissipated power (Max): 710mW (Ta)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SOT-23-3

External dimensions/packaging: SOT-23-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI2333CDS-T1-E3 SI2333CDS-T1-E3 VISHAY 类似代替 SOT-23-3
TRANS MOSFET P-CH 12V 5.1A 3Pin SOT-23T/R
PDF
SI2333CDS-T1-E3 SI2333CDS-T1-E3 Vishay Siliconix 类似代替 SOT-23-3
TRANS MOSFET P-CH 12V 5.1A 3Pin SOT-23T/R
PDF
SI2333CDS-T1-GE3 SI2333CDS-T1-GE3 Vishay Siliconix 类似代替 SOT-23-3
Trans MOSFET P-CH 12V 5.1A 3Pin SOT-23 T/R
PDF
SI2333CDS-T1-GE3 SI2333CDS-T1-GE3 Vishay Dale 类似代替
Trans MOSFET P-CH 12V 5.1A 3Pin SOT-23 T/R
SI2333DS-T1-GE3 SI2333DS-T1-GE3 Vishay Semiconductor 类似代替 SOT-23
Trans MOSFET P-CH 12V 4.1A 3Pin SOT-23 T/R
PDF
SI2333DS-T1-GE3 SI2333DS-T1-GE3 VISHAY 类似代替 SOT-23-3
Trans MOSFET P-CH 12V 4.1A 3Pin SOT-23 T/R
PDF

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