Technical parameters/drain source resistance: 39.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.25 W
Technical parameters/leakage source breakdown voltage: -20.0 V
Technical parameters/Continuous drain current (Ids): -4.70 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI2323CDS-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOT-23 |
MOSFET P-CH 20V 6A SOT-23
|
||
SI2323CDS-T1-GE3
|
VISHAY | 类似代替 | SOT-23-3 |
MOSFET P-CH 20V 6A SOT-23
|
||
SI2323CDS-T1-GE3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
MOSFET P-CH 20V 6A SOT-23
|
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