Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.032 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 400 mV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 6A
Technical parameters/rise time: 23 ns
Technical parameters/Input capacitance (Ciss): 1090pF @10V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DMG3415U-7
|
Diodes Zetex | 功能相似 | SOT-23 |
DMG3415U-7 编带
|
||
SI2323DS-T1
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
MOSFET P-CH 20V 3.7A SOT23
|
||
SI2323DS-T1
|
Vishay Semiconductor | 类似代替 | SOT-23 |
MOSFET P-CH 20V 3.7A SOT23
|
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