Technical parameters/dissipated power: 750mW (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 1020pF @10V(Vds)
Technical parameters/dissipated power (Max): 750mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.6 mm
External dimensions/height: 1.45 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI2323CDS-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOT-23 |
MOSFET P-CH 20V 6A SOT-23
|
||
SI2323CDS-T1-GE3
|
VISHAY | 类似代替 | SOT-23-3 |
MOSFET P-CH 20V 6A SOT-23
|
||
SI2323CDS-T1-GE3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
MOSFET P-CH 20V 6A SOT-23
|
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