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Model SI2323CDS-T1-GE3
Description VISHAY SI2323CDS-T1-GE3 晶体管, MOSFET, P沟道, -6 A, -20 V, 0.032 ohm, -4.5 V, -400 mV
Product QR code
Brand: Vishay Semiconductor
Packaging SOT-23
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.81  yuan 0.81yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1905) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.032 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

2.5 W

 

Technical parameters/operating temperature (Max):

150 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-23

 

Dimensions/Packaging:

SOT-23

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Power Management, Industrial

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/06/15

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
DMG3415U-7 DMG3415U-7 Diodes Zetex 功能相似 SOT-23
DMG3415U-7 编带
PDF
SI2323DS-T1 SI2323DS-T1 Vishay Siliconix 类似代替 SOT-23-3
MOSFET P-CH 20V 3.7A SOT23
PDF
SI2323DS-T1 SI2323DS-T1 Vishay Semiconductor 类似代替 SOT-23
MOSFET P-CH 20V 3.7A SOT23
PDF

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