Technical parameters/forward voltage: 0.86 V
Technical parameters/reverse recovery time: 1.5 µs
Technical parameters/Maximum reverse voltage (Vrrm): 100 V
Technical parameters/forward current: 3 A
Technical parameters/maximum reverse leakage current (Ir): 10 uA
Encapsulation parameters/Encapsulation: DO-221AC
External dimensions/packaging: DO-221AC
Other/Minimum Packaging: 14000
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SE30AFB-M3/6B
|
Vishay Semiconductor | 类似代替 | DO-221AC |
Diode Switching Diode 100V 3A 2Pin DO-221AC Plastic T/R
|
||
|
|
VISHAY | 类似代替 | DO-221AC |
Diode Switching Diode 100V 3A 2Pin DO-221AC Plastic T/R
|
||
SE30AFBHM3/6A
|
Vishay Semiconductor | 类似代替 | DO-221AC |
2A 至 10A 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器,Vishay Semiconductor
|
||
SE30AFBHM3/6A
|
Vishay Siliconix | 类似代替 |
2A 至 10A 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器,Vishay Semiconductor
|
|||
SE30AFBHM3/6A
|
VISHAY | 类似代替 | DO-221AC |
2A 至 10A 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器,Vishay Semiconductor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review