Technical parameters/forward voltage: | 1.1V @3A |
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Technical parameters/reverse recovery time: | 1500 ns |
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Technical parameters/forward current: | 3 A |
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Technical parameters/Maximum forward surge current (Ifsm): | 40 A |
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Technical parameters/forward voltage (Max): | 980 mV |
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Technical parameters/forward current (Max): | 3 A |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/operating temperature: | -55℃ ~ 175℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-221AC |
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Dimensions/Length: | 4.35 mm |
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Dimensions/Width: | 2.7 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | DO-221AC |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SE30AFB-M3/6A
|
Vishay Semiconductor | 类似代替 | DO-221AC |
VISHAY SE30AFB-M3/6A 标准恢复二极管, 单, 100 V, 3 A, 980 mV, 40 A
|
||
|
|
VISHAY | 类似代替 | DO-221AC |
VISHAY SE30AFB-M3/6A 标准恢复二极管, 单, 100 V, 3 A, 980 mV, 40 A
|
||
SE30AFB-M3/6B
|
Vishay Semiconductor | 类似代替 | DO-221AC |
Diode Switching Diode 100V 3A 2Pin DO-221AC Plastic T/R
|
||
|
|
VISHAY | 类似代替 | DO-221AC |
Diode Switching Diode 100V 3A 2Pin DO-221AC Plastic T/R
|
||
SE30AFBHM3/6A
|
Vishay Semiconductor | 功能相似 | DO-221AC |
2A 至 10A 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器，Vishay Semiconductor
|
||
SE30AFBHM3/6A
|
Vishay Siliconix | 功能相似 |
2A 至 10A 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器，Vishay Semiconductor
|
|||
SE30AFBHM3/6A
|
VISHAY | 功能相似 | DO-221AC |
2A 至 10A 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器，Vishay Semiconductor
|
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