Technical parameters/forward voltage: 1.1 V
Technical parameters/reverse recovery time: 1500 ns
Technical parameters/Maximum reverse voltage (Vrrm): 100 V
Technical parameters/forward current: 3000 mA
Technical parameters/Maximum forward surge current (Ifsm): 40 A
Technical parameters/maximum reverse leakage current (Ir): 10 uA
Technical parameters/forward voltage (Max): 1.1 V
Technical parameters/forward current (Max): 3 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-221AC
External dimensions/length: 4.35 mm
External dimensions/width: 2.7 mm
External dimensions/height: 1 mm
External dimensions/packaging: DO-221AC
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SE30AFB-M3/6A
|
Vishay Semiconductor | 类似代替 | DO-221AC |
VISHAY SE30AFB-M3/6A 标准恢复二极管, 单, 100 V, 3 A, 980 mV, 40 A
|
||
|
|
VISHAY | 类似代替 | DO-221AC |
VISHAY SE30AFB-M3/6A 标准恢复二极管, 单, 100 V, 3 A, 980 mV, 40 A
|
||
SE30AFB-M3/6B
|
Vishay Semiconductor | 类似代替 | DO-221AC |
Diode Switching Diode 100V 3A 2Pin DO-221AC Plastic T/R
|
||
|
|
VISHAY | 类似代替 | DO-221AC |
Diode Switching Diode 100V 3A 2Pin DO-221AC Plastic T/R
|
||
SE30AFBHM3/6A
|
Vishay Semiconductor | 功能相似 | DO-221AC |
2A 至 10A 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器,Vishay Semiconductor
|
||
SE30AFBHM3/6A
|
Vishay Siliconix | 功能相似 |
2A 至 10A 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器,Vishay Semiconductor
|
|||
SE30AFBHM3/6A
|
VISHAY | 功能相似 | DO-221AC |
2A 至 10A 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 ### 二极管和整流器,Vishay Semiconductor
|
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