Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.1 Ω
Technical parameters/dissipated power: 48 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 50 V
Technical parameters/rise time: 24 ns
Technical parameters/Input capacitance (Ciss): 670pF @25V(Vds)
Technical parameters/rated power (Max): 48 W
Technical parameters/descent time: 16 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 48 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.8 mm
External dimensions/width: 2.5 mm
External dimensions/height: 6.3 mm
External dimensions/packaging: TO-251-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Other/Manufacturing Applications: Consumer electronics, industrial, power management, portable devices
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
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