Technical parameters/rated voltage (DC): | 60.0 V |
|
Technical parameters/rated current: | 25.0 A |
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Technical parameters/drain source resistance: | 104 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 48.0 W |
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Technical parameters/Input capacitance: | 440 pF |
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Technical parameters/gate charge: | 20.0 nC |
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Technical parameters/drain source voltage (Vds): | 60.0 V |
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Technical parameters/Leakage source breakdown voltage: | 60.0 V |
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Technical parameters/breakdown voltage of gate source: | ±15.0 V |
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Technical parameters/Continuous drain current (Ids): | 12.0 A |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252 |
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Dimensions/Packaging: | TO-252 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTD3055L104-1G
|
ON Semiconductor | 类似代替 | TO-251-3 |
ON SEMICONDUCTOR NTD3055L104-1G 晶体管, MOSFET, N沟道, 12 A, 60 V, 0.089 ohm, 5 V, 1.6 V 新
|
||
NTD3055L104T4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR NTD3055L104T4G 晶体管, MOSFET, N沟道, 12 A, 60 V, 0.089 ohm, 5 V, 1.6 V
|
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