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Model NTD3055L104-1G
Description ON SEMICONDUCTOR NTD3055L104-1G Transistor, MOSFET, N-channel, 12 A, 60 V, 0.089 ohm, 5 V, 1.6 V new
Product QR code
Brand: ON Semiconductor
Packaging TO-251-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
1.4  yuan 1.4yuan
5+:
$ 1.8873
25+:
$ 1.7475
50+:
$ 1.6496
100+:
$ 1.6077
500+:
$ 1.5797
2500+:
$ 1.5448
5000+:
$ 1.5308
10000+:
$ 1.5098
Quantity
5+
25+
50+
100+
500+
Price
$1.8873
$1.7475
$1.6496
$1.6077
$1.5797
Price $ 1.8873 $ 1.7475 $ 1.6496 $ 1.6077 $ 1.5797
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8748) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 60.0 V

Technical parameters/rated current: 25.0 A

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.089 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 48 W

Technical parameters/threshold voltage: 1.6 V

Technical parameters/input capacitance: 440 pF

Technical parameters/gate charge: 20.0 nC

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/leakage source breakdown voltage: 60.0 V

Technical parameters/breakdown voltage of gate source: ±15.0 V

Technical parameters/Continuous drain current (Ids): 12.0 A

Technical parameters/rise time: 104 ns

Technical parameters/Input capacitance (Ciss): 440pF @25V(Vds)

Technical parameters/rated power (Max): 1.5 W

Technical parameters/descent time: 40.5 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1.5 W

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-251-3

External dimensions/length: 6.73 mm

External dimensions/width: 6.22 mm

External dimensions/height: 2.38 mm

External dimensions/packaging: TO-251-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Industrial, Power Management, Motor Drive&Control, Motor Drive&Control, Industrial, Power Management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/12/17

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTD3055L104G NTD3055L104G ChendaHang 类似代替 TO-252
ON SEMICONDUCTOR NTD3055L104G 晶体管, MOSFET, N沟道, 12 A, 60 V, 104 mohm, 5 V, 1.6 V
NTD3055L104G NTD3055L104G ON Semiconductor 类似代替 TO-252-3
ON SEMICONDUCTOR NTD3055L104G 晶体管, MOSFET, N沟道, 12 A, 60 V, 104 mohm, 5 V, 1.6 V
PDF
NTD3055L104T4G NTD3055L104T4G ON Semiconductor 类似代替 TO-252-3
ON SEMICONDUCTOR NTD3055L104T4G 晶体管, MOSFET, N沟道, 12 A, 60 V, 0.089 ohm, 5 V, 1.6 V
PDF

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