Technical parameters/Input capacitance (Ciss): 300pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 6900 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.7 mm
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PHT4NQ10T
|
Nexperia | 类似代替 | SOT-223 |
N 通道 MOSFET,1A 至 9A,NXP Semiconductors ### MOSFET 晶体管,NXP Semiconductors
|
||
PHT4NQ10T,135
|
NXP | 功能相似 | TO-261-4 |
NXP PHT4NQ10T,135 晶体管, MOSFET, N沟道, 1.75 A, 100 V, 0.2 ohm, 10 V, 3 V
|
||
|
|
NXP | 类似代替 | SOT-223 |
MOSFET TAPE13 PWR-MOS
|
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