Technical parameters/rated voltage (DC): | 100 V |
|
Technical parameters/rated current: | 3.50 A |
|
Technical parameters/Input capacitance: | 300 pF |
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Technical parameters/gate charge: | 7.40 nC |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Continuous drain current (Ids): | 3.50 A |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT-223 |
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Dimensions/Packaging: | SOT-223 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape, Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PHT4NQ10T
|
Nexperia | 完全替代 | SOT-223 |
N 通道 MOSFET,1A 至 9A,NXP Semiconductors ### MOSFET 晶体管,NXP Semiconductors
|
||
PHT4NQ10T,135
|
NXP | 类似代替 | TO-261-4 |
NXP PHT4NQ10T,135 晶体管, MOSFET, N沟道, 1.75 A, 100 V, 0.2 ohm, 10 V, 3 V
|
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