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Model PHT4NQ10T,135

Description NXP PHT4NQ10T,135 晶体管, MOSFET, N沟道, 1.75 A, 100 V, 0.2 ohm, 10 V, 3 V

Brand: NXP

Packaging TO-261-4

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of channels:	1
Technical parameters/number of pins:	4
Technical parameters/drain source resistance:	0.2 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	6.9 W
Technical parameters/threshold voltage:	3 V
Technical parameters/drain source voltage (Vds):	100 V
Technical parameters/Continuous drain current (Ids):	3.50 A
Technical parameters/rise time:	13 ns
Technical parameters/Input capacitance (Ciss):	300pF @25V(Vds)
Technical parameters/rated power (Max):	6.9 W
Technical parameters/descent time:	11 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/dissipated power (Max):	6.9W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	4
Encapsulation parameters/Encapsulation:	TO-261-4
Dimensions/Width:	3.7 mm
Dimensions/Packaging:	TO-261-4
Physical parameters/operating temperature:	-65℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Power Management, Industrial
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	PHT4NQ10T,135	NXP	类似代替	TO-261-4	Nexperia Si N沟道 MOSFET PHT4NQ10T,135, 3.5 A, Vds=100 V, 4引脚 SOT-223 (SC-73)封装	PDF
	PHT4NQ10T/T3	NXP	类似代替	SOT-223	MOSFET TAPE13 PWR-MOS	PDF