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Model PHT6N06T
Description TrenchMOS™ standard level FET
Product QR code
Brand: Philips
Packaging SOT-223
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
1.21  yuan 1.21yuan
5+:
$ 1.6362
25+:
$ 1.5150
50+:
$ 1.4302
100+:
$ 1.3938
500+:
$ 1.3696
2500+:
$ 1.3393
5000+:
$ 1.3271
10000+:
$ 1.3090
Quantity
5+
25+
50+
100+
500+
Price
$1.6362
$1.5150
$1.4302
$1.3938
$1.3696
Price $ 1.6362 $ 1.5150 $ 1.4302 $ 1.3938 $ 1.3696
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5050) Minimum order quantity(5)
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Technical parameters/drain source resistance: 150 mΩ

Technical parameters/dissipated power: 8.3 W

Technical parameters/threshold voltage: 3 V

Technical parameters/drain source voltage (Vds): 55 V

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-223

External dimensions/packaging: SOT-223

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Cut Tape (CT)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standard/REACH SVHC version: 2014/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BUK78150-55A BUK78150-55A Philips 类似代替
NXP BUK78150-55A 晶体管, MOSFET, N沟道, 5.5 A, 55 V, 150 mohm, 10 V, 3 V
PDF
BUK78150-55A BUK78150-55A NXP 类似代替 SOT-223
NXP BUK78150-55A 晶体管, MOSFET, N沟道, 5.5 A, 55 V, 150 mohm, 10 V, 3 V
PDF
PHT6N06LT PHT6N06LT Philips 功能相似
NXP PHT6N06LT 晶体管, MOSFET, N沟道, 2.5 A, 55 V, 150 mohm, 5 V, 1.5 V
PDF
PHT6N06LT PHT6N06LT NXP 功能相似 SOT-223
NXP PHT6N06LT 晶体管, MOSFET, N沟道, 2.5 A, 55 V, 150 mohm, 5 V, 1.5 V
PDF
PHT6N06T,135 PHT6N06T,135 Nexperia 功能相似 SOT-223-3
Trans MOSFET N-CH 55V 5.5A 4Pin(3+Tab) SC-73 T/R
PDF

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