Technical parameters/dissipated power: | 8.3 W |
|
Technical parameters/rise time: | 14.5 ns |
|
Technical parameters/Input capacitance (Ciss): | 175pF @25V(Vds) |
|
Technical parameters/descent time: | 4.5 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 8300 mW |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | SOT-223-3 |
|
Dimensions/Length: | 6.7 mm |
|
Dimensions/Width: | 3.7 mm |
|
Dimensions/Height: | 1.7 mm |
|
Dimensions/Packaging: | SOT-223-3 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PHT6N06LT
|
Philips | 类似代替 |
晶体管, MOSFET, N沟道, 2.5 A, 55 V, 0.15 ohm, 5 V, 1.5 V
|
|||
PHT6N06LT
|
NXP | 类似代替 | SOT-223 |
晶体管, MOSFET, N沟道, 2.5 A, 55 V, 0.15 ohm, 5 V, 1.5 V
|
||
|
|
ETC | 类似代替 |
晶体管, MOSFET, N沟道, 2.5 A, 55 V, 0.15 ohm, 10 V, 3 V
|
|||
PHT6N06T
|
NXP | 类似代替 | SOT-223 |
晶体管, MOSFET, N沟道, 2.5 A, 55 V, 0.15 ohm, 10 V, 3 V
|
||
PHT6N06T
|
Philips | 类似代替 | SOT-223 |
晶体管, MOSFET, N沟道, 2.5 A, 55 V, 0.15 ohm, 10 V, 3 V
|
||
|
|
Nexperia | 功能相似 | SOT-223-3 |
Trans MOSFET N-CH 55V 5.5A 4Pin(3+Tab) SC-73 T/R
|
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