Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 150 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 8.3 W |
|
Technical parameters/threshold voltage: | 1.5 V |
|
Technical parameters/drain source voltage (Vds): | 55 V |
|
Technical parameters/Continuous drain current (Ids): | 5.50 A |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-223 |
|
Dimensions/Packaging: | SOT-223 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Other/Manufacturing Applications: | Power Management, Consumer Electronics, Power Management, Industrial, Industrial |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Philips | 类似代替 |
NXP BUK78150-55A 晶体管, MOSFET, N沟道, 5.5 A, 55 V, 150 mohm, 10 V, 3 V
|
|||
BUK78150-55A
|
NXP | 类似代替 | SOT-223 |
NXP BUK78150-55A 晶体管, MOSFET, N沟道, 5.5 A, 55 V, 150 mohm, 10 V, 3 V
|
||
BUK78150-55A,115
|
NXP | 功能相似 | TO-261-4 |
SC-73 N-CH 55V 5.5A
|
||
PHT6N06LT
|
Philips | 类似代替 |
NXP PHT6N06LT 晶体管, MOSFET, N沟道, 2.5 A, 55 V, 150 mohm, 5 V, 1.5 V
|
|||
PHT6N06LT
|
NXP | 类似代替 | SOT-223 |
NXP PHT6N06LT 晶体管, MOSFET, N沟道, 2.5 A, 55 V, 150 mohm, 5 V, 1.5 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review