Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.25 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 100 @5mA, 5V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial, Automotive
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMUN2111LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMUN2111LT1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率, SOT-23
|
||
MUN2111T1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MUN2111T1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率, SC-59
|
||
PDTA114YT,215
|
NXP | 类似代替 | SOT-23-3 |
Nexperia PDTA114YT,215 PNP 数字晶体管, 100 mA, Vce=50 V, 10 kΩ, 电阻比:0.21，1, 3引脚
|
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