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Specification parameters
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Technical parameters/rated voltage (DC):

-50.0 V

Technical parameters/rated current:

-100 mA

Technical parameters/rated power:

246 mW

Technical parameters/halogen-free state:

Halogen Free

Technical parameters/polarity:

PNP

Technical parameters/dissipated power:

0.4 W

Technical parameters/breakdown voltage (collector emitter):

50 V

Technical parameters/Maximum allowable collector current:

100mA

Technical parameters/minimum current amplification factor (hFE):

35 @5mA, 10V

Technical parameters/maximum current amplification factor (hFE):

Technical parameters/rated power (Max):

246 mW

Technical parameters/operating temperature (Max):

150 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

400 mW

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

SOT-23-3

Dimensions/Length:

2.9 mm

Dimensions/Width:

1.3 mm

Dimensions/Height:

0.94 mm

Dimensions/Packaging:

SOT-23-3

Physical parameters/operating temperature:

-55℃ ~ 150℃

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tape & Reel (TR)

Other/Manufacturing Applications:

Industrial, Power Management, Industrial, Power Management

Compliant with standards/RoHS standards:

RoHS Compliant

Compliant with standards/lead standards:

Lead Free

Compliant with the REACH SVHC standard:

No SVHC

Compliant with st

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
MMUN2111LT1	Leshan Radio	类似代替		PNP硅偏置电阻晶体管 PNP SILICON BIAS RESISTOR TRANSISTOR	PDF
MMUN2111LT1	ON Semiconductor	类似代替	SOT-23-3	PNP硅偏置电阻晶体管 PNP SILICON BIAS RESISTOR TRANSISTOR	PDF
MMUN2111LT3G	ON Semiconductor	完全替代	SOT-23-3	数字晶体管（ BRT ） R1 = 10千欧， R2 = 10千？ Digital Transistors (BRT) R1 = 10 k, R2 = 10 k	PDF
PDTA114ET@215	NXP	类似代替	TO-236	Trans Digital BJT PNP 50V 100mA 3Pin TO-236AB T/R	PDF

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Tel: +86-0755-82866643