Technical parameters/rated voltage (DC): | -50.0 V |
|
Technical parameters/rated current: | -100 mA |
|
Technical parameters/halogen-free state: | Halogen Free |
|
Technical parameters/polarity: | PNP |
|
Technical parameters/dissipated power: | 0.4 W |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
|
Technical parameters/minimum current amplification factor (hFE): | 35 @5mA, 10V |
|
Technical parameters/rated power (Max): | 246 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 400 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Packaging: | SOT-23-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJV4102RMTF
|
ON Semiconductor | 类似代替 | SOT-23-3 |
1个PNP-预偏置 100mA 50V
|
||
FJV4102RMTF
|
Fairchild | 类似代替 | SOT-23-3 |
1个PNP-预偏置 100mA 50V
|
||
|
|
Leshan Radio | 类似代替 |
PNP硅偏置电阻晶体管 PNP SILICON BIAS RESISTOR TRANSISTOR
|
|||
MMUN2111LT1
|
ON Semiconductor | 类似代替 | SOT-23-3 |
PNP硅偏置电阻晶体管 PNP SILICON BIAS RESISTOR TRANSISTOR
|
||
MMUN2111LT1G
|
ON Semiconductor | 完全替代 | SOT-23-3 |
ON SEMICONDUCTOR MMUN2111LT1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率, SOT-23
|
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