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Model MUN2111T1G

Description ON SEMICONDUCTOR MUN2111T1G Bipolar pre bias/digital transistor, BRT, 50 V, 100 mA, 10 Kohm, 10 Kohm, 1 resistance ratio, SC-59

Brand: ON Semiconductor

Packaging SOT-23-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	-50.0 V
Technical parameters/rated current:	-100 mA
Technical parameters/halogen-free state:	Halogen Free
Technical parameters/polarity:	PNP
Technical parameters/dissipated power:	0.338 W
Technical parameters/breakdown voltage (collector emitter):	50 V
Technical parameters/Maximum allowable collector current:	100mA
Technical parameters/minimum current amplification factor (hFE):	35 @5mA, 10V
Technical parameters/maximum current amplification factor (hFE):	35
Technical parameters/rated power (Max):	230 mW
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	338 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23-3
Dimensions/Length:	2.9 mm
Dimensions/Width:	1.5 mm
Dimensions/Height:	1.09 mm
Dimensions/Packaging:	SOT-23-3
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17
Customs information/ECCN code:	EAR99

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	MUN2111T1	Motorola	类似代替		MUN2111T1 带阻尼PNP三极管 -50V -100mA/-0.1A 60 0.338W/338mW SOT-23/SC-59 标记6A 开关电路，逆变器，接口电路，驱动电路	PDF
	MUN2111T3G	ON Semiconductor	类似代替	SOT-23-3	偏置电阻晶体管 Bias Resistor Transistors	PDF