Technical parameters/frequency: 1.4 GHz
Technical parameters/halogen-free state: Halogen Free
Technical parameters/output power: 330 W
Technical parameters/gain: 18 dB
Technical parameters/test current: 150 mA
Technical parameters/rated voltage: 100 V
Encapsulation parameters/Encapsulation: NI-780H-2L
External dimensions/packaging: NI-780H-2L
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMRF1008HR5
|
Freescale | 类似代替 |
RF MOSFET Transistors RF Power MOSFET 960- 1215MHz 275W 50V
|
|||
MMRF1008HR5
|
NXP | 类似代替 | NI-780H-2L |
RF MOSFET Transistors RF Power MOSFET 960- 1215MHz 275W 50V
|
||
MRF6V12250HR5
|
Freescale | 类似代替 | NI-780 |
晶体管, 射频FET, 100 VDC, 960 MHz, 1215 MHz, NI-780
|
||
MRF6V12250HSR5
|
NXP | 功能相似 | NI-780S |
RF Power Transistor,960 to 1215MHz, 275W, Typ Gain in dB is 20.3 @ 1030MHz, 50V, LDMOS, SOT1793
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review