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Model MMRF1008HR5
Description RF MOSFET Transistors RF Power MOSFET 960- 1215MHz 275W 50V
Product QR code
Brand: NXP
Packaging NI-780H-2L
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2924.24  yuan 2924.24yuan
1+:
$ 3216.6607
10+:
$ 3187.4183
25+:
$ 3172.7971
50+:
$ 3158.1760
100+:
$ 3143.5548
150+:
$ 3128.9336
250+:
$ 3114.3124
500+:
$ 3099.6912
Quantity
1+
10+
25+
50+
100+
Price
$3216.6607
$3187.4183
$3172.7971
$3158.1760
$3143.5548
Price $ 3216.6607 $ 3187.4183 $ 3172.7971 $ 3158.1760 $ 3143.5548
Start batch production 1+ 10+ 25+ 50+ 100+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3638) Minimum order quantity(1)
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Technical parameters/frequency: 1.03 GHz

Technical parameters/output power: 275 W

Technical parameters/gain: 20.3 dB

Technical parameters/test current: 100 mA

Technical parameters/Input capacitance (Ciss): 695pF @50V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/rated voltage: 100 V

Technical parameters/power supply voltage: 50 V

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: NI-780H-2L

External dimensions/packaging: NI-780H-2L

Physical parameters/operating temperature: -65℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MMRF1008HSR5 MMRF1008HSR5 Freescale 完全替代 NI-780S
RF MOSFET Transistors RF Power MOSFET 960- 1215MHz 275W 50V
PDF
MRF6V12250HR3 MRF6V12250HR3 NXP 类似代替 NI-780H-2L
Pulsed Lateral N-Channel RF Power MOSFET, 960-1215MHz, 275W, 50V
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MRF6V12250HR3 MRF6V12250HR3 Freescale 类似代替 NI-780
Pulsed Lateral N-Channel RF Power MOSFET, 960-1215MHz, 275W, 50V
PDF
MRF6V12250HR5 MRF6V12250HR5 Freescale 类似代替 NI-780
晶体管, 射频FET, 100 VDC, 960 MHz, 1215 MHz, NI-780
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