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Model MRF6V12250HR3
Description Pulsed Lateral N-Channel RF Power MOSFET, 960-1215MHz, 275W, 50V
Product QR code
Brand: NXP
Packaging NI-780H-2L
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2146) Minimum order quantity(1)
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Technical parameters/frequency:

1.03 GHz

 

Technical parameters/halogen-free state:

Halogen Free

 

Technical parameters/output power:

275 W

 

Technical parameters/gain:

20.3 dB

 

Technical parameters/test current:

100 mA

 

Technical parameters/operating temperature (Max):

225 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/rated voltage:

100 V

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

NI-780H-2L

 

Dimensions/Packaging:

NI-780H-2L

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MMRF1008HR5 MMRF1008HR5 Freescale 类似代替
RF MOSFET Transistors RF Power MOSFET 960- 1215MHz 275W 50V
PDF
MMRF1008HR5 MMRF1008HR5 NXP 类似代替 NI-780H-2L
RF MOSFET Transistors RF Power MOSFET 960- 1215MHz 275W 50V
PDF
MRF6V12250HR5 MRF6V12250HR5 Freescale 完全替代 NI-780
晶体管, 射频FET, 100 VDC, 960 MHz, 1215 MHz, NI-780
PDF
MRF6V12250HSR5 MRF6V12250HSR5 NXP 完全替代 NI-780S
RF Power Transistor,960 to 1215MHz, 275W, Typ Gain in dB is 20.3 @ 1030MHz, 50V, LDMOS, SOT1793
PDF

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