Technical parameters/frequency: 1.03 GHz
Technical parameters/rated current: 10 µA
Technical parameters/halogen-free state: Halogen Free
Technical parameters/output power: 275 W
Technical parameters/gain: 20.3 dB
Technical parameters/test current: 100 mA
Technical parameters/operating temperature (Max): 225 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/rated voltage: 100 V
Technical parameters/power supply voltage: 50 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: NI-780S
External dimensions/packaging: NI-780S
Physical parameters/operating temperature: -65℃ ~ 225℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MRF6V12250HR3
|
NXP | 完全替代 | NI-780H-2L |
Pulsed Lateral N-Channel RF Power MOSFET, 960-1215MHz, 275W, 50V
|
||
MRF6V12250HR3
|
Freescale | 完全替代 | NI-780 |
Pulsed Lateral N-Channel RF Power MOSFET, 960-1215MHz, 275W, 50V
|
||
MRF6V12250HR5
|
Freescale | 完全替代 | NI-780 |
晶体管, 射频FET, 100 VDC, 960 MHz, 1215 MHz, NI-780
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review