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Model MRF6V10250HSR3
Description FET RF 100V 1.09GHz NI780S
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Brand: NXP
Packaging NI-780S
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4731) Minimum order quantity(1)
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Technical parameters/frequency: 1.09 GHz

Technical parameters/output power: 250 W

Technical parameters/gain: 21 dB

Technical parameters/test current: 250 mA

Technical parameters/rated voltage: 100 V

Encapsulation parameters/Encapsulation: NI-780S

External dimensions/packaging: NI-780S

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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MMRF1008HSR5 MMRF1008HSR5 Freescale 类似代替 NI-780S
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MRF6V12250HSR5 MRF6V12250HSR5 NXP 类似代替 NI-780S
RF Power Transistor,960 to 1215MHz, 275W, Typ Gain in dB is 20.3 @ 1030MHz, 50V, LDMOS, SOT1793
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