Technical parameters/rated voltage (DC): -40.0 V
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 625 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.05A
Technical parameters/minimum current amplification factor (hFE): 250 @10mA, 5V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.21 mm
External dimensions/width: 4.19 mm
External dimensions/height: 7.87 mm
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPS4250
|
ROHM Semiconductor | 类似代替 |
晶体管（ PNP硅） Transistor(PNP Silicon)
|
|||
MPS4250
|
ON Semiconductor | 类似代替 | TO-92-3 |
晶体管（ PNP硅） Transistor(PNP Silicon)
|
||
|
|
Micro Electronics | 类似代替 |
放大器晶体管 Amplifier Transistors
|
|||
MPS6523
|
ON Semiconductor | 类似代替 | TO-92-3 |
放大器晶体管 Amplifier Transistors
|
||
MPS6523
|
Fairchild | 类似代替 | TO-92-3 |
放大器晶体管 Amplifier Transistors
|
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