Technical parameters/rated voltage (DC): | -25.0 V |
|
Technical parameters/rated current: | 100 mA |
|
Technical parameters/dissipated power: | 625 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 25 V |
|
Technical parameters/minimum current amplification factor (hFE): | 300 @2mA, 10V |
|
Technical parameters/rated power (Max): | 625 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 625 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-92-3 |
|
Dimensions/Length: | 5.2 mm |
|
Dimensions/Width: | 4.19 mm |
|
Dimensions/Height: | 5.33 mm |
|
Dimensions/Packaging: | TO-92-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Box |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC640TA
|
Fairchild | 功能相似 | TO-92-3 |
ON Semiconductor BC640TA , PNP 晶体管, 1 A, Vce=100 V, HFE:25, 100 MHz, 3引脚 TO-92封装
|
||
MPS4250G
|
ON Semiconductor | 类似代替 | TO-92-3 |
PNP硅晶体管 PNP Silicon Transistor
|
||
PN4250
|
Fairchild | 功能相似 | TO-226-3 |
PNP通用放大器 PNP General Purpose Amplifier
|
||
PN4250
|
Central Semiconductor | 功能相似 | TO-92-3 |
PNP通用放大器 PNP General Purpose Amplifier
|
||
PN4250
|
Freescale | 功能相似 |
PNP通用放大器 PNP General Purpose Amplifier
|
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