Technical parameters/rated voltage (DC): | -40.0 V |
|
Technical parameters/rated current: | -500 mA |
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Technical parameters/polarity: | PNP |
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Technical parameters/dissipated power: | 625 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 40 V |
|
Technical parameters/Maximum allowable collector current: | 0.5A |
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Technical parameters/minimum current amplification factor (hFE): | 250 @100µA, 5V |
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Technical parameters/rated power (Max): | 625 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
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Dimensions/Packaging: | TO-226-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Secos | 功能相似 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
|||
BC640
|
Continental Device | 功能相似 | TO-92 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
||
BC640
|
Multicomp | 功能相似 | TO-92 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
||
BC640
|
NXP | 功能相似 | TO-92 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
||
BC640
|
Micro Electronics | 功能相似 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
|||
BC640TA
|
Fairchild | 功能相似 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR BC640TA 单晶体管 双极, PNP, -80 V, 100 MHz, 1 W, -1 A, 25 hFE
|
||
PN4250
|
Fairchild | 类似代替 | TO-226-3 |
TRANS PNP 40V 0.5A TO-92
|
||
PN4250
|
Central Semiconductor | 类似代替 | TO-92-3 |
TRANS PNP 40V 0.5A TO-92
|
||
PN4250
|
Freescale | 类似代替 |
TRANS PNP 40V 0.5A TO-92
|
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