Technical parameters/rated voltage (DC): -40.0 V
Technical parameters/polarity: Dual P-Channel
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): -40.0 V
Technical parameters/maximum allowable collector current: 0.05A
Technical parameters/minimum current amplification factor (hFE): 250
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Secos | 功能相似 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
|||
BC640
|
Continental Device | 功能相似 | TO-92 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
||
BC640
|
Multicomp | 功能相似 | TO-92 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
||
BC640
|
NXP | 功能相似 | TO-92 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
||
BC640
|
Micro Electronics | 功能相似 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
|||
BC640TA
|
Fairchild | 功能相似 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR BC640TA 单晶体管 双极, PNP, -80 V, 100 MHz, 1 W, -1 A, 25 hFE
|
||
MPS4250G
|
ON Semiconductor | 类似代替 | TO-92-3 |
PNP硅晶体管 PNP Silicon Transistor
|
||
PN4250
|
Fairchild | 功能相似 | TO-226-3 |
PNP通用放大器 PNP General Purpose Amplifier
|
||
PN4250
|
Central Semiconductor | 功能相似 | TO-92-3 |
PNP通用放大器 PNP General Purpose Amplifier
|
||
PN4250
|
Freescale | 功能相似 |
PNP通用放大器 PNP General Purpose Amplifier
|
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