Technical parameters/frequency: 50 MHz
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 350 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/minimum current amplification factor (hFE): 300 @100µA, 5V
Technical parameters/rated power (Max): 350 mW
Technical parameters/DC current gain (hFE): 300
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT5088
|
UTC | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT5088 单晶体管 双极, NPN, 30 V, 50 MHz, 350 mW, 100 mA, 300 hFE
|
||
MMBT5088
|
ON Semiconductor | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5088 单晶体管 双极, NPN, 30 V, 50 MHz, 350 mW, 100 mA, 300 hFE
|
||
MMBT5088LT1
|
ON Semiconductor | 类似代替 | SOT-23-3 |
低噪声晶体管 Low Noise Transistors
|
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