Technical parameters/rated voltage (DC): | 30.0 V |
|
Technical parameters/rated current: | 50.0 A |
|
Technical parameters/polarity: | NPN |
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Technical parameters/breakdown voltage (collector emitter): | 30 V |
|
Technical parameters/Maximum allowable collector current: | 0.05A |
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Technical parameters/minimum current amplification factor (hFE): | 300 @100µA, 5V |
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Technical parameters/rated power (Max): | 300 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Packaging: | SOT-23-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT5088
|
UTC | 类似代替 | SOT-23 |
MMBT5088系列 30 V CE击穿 0.1 A NPN 通用 放大器 - SOT-23
|
||
MMBT5088
|
ON Semiconductor | 类似代替 | SOT-23-3 |
MMBT5088系列 30 V CE击穿 0.1 A NPN 通用 放大器 - SOT-23
|
||
MMBT5088LT1
|
ON Semiconductor | 功能相似 | SOT-23-3 |
Low Noise Transistors(NPN Silicon)
|
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