Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 30 V |
|
Technical parameters/Maximum allowable collector current: | 0.1A |
|
Technical parameters/minimum current amplification factor (hFE): | 300 |
|
Technical parameters/maximum current amplification factor (hFE): | 900 |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-23 |
|
Dimensions/Packaging: | SOT-23 |
|
Other/Product Lifecycle: | Active |
|
Other/Minimum Packaging: | 3000 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT5088
|
UTC | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT5088 单晶体管 双极, NPN, 30 V, 50 MHz, 350 mW, 100 mA, 300 hFE
|
||
MMBT5088
|
ON Semiconductor | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5088 单晶体管 双极, NPN, 30 V, 50 MHz, 350 mW, 100 mA, 300 hFE
|
||
MMBT5088LT1
|
ON Semiconductor | 类似代替 | SOT-23-3 |
低噪声晶体管 Low Noise Transistors
|
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