Technical parameters/number of pins: 3
Technical parameters/dissipated power: 350 mW
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 35
Technical parameters/rated power (Max): 350 mW
Technical parameters/DC current gain (hFE): 300
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/height: 0.93 mm
External dimensions/packaging: SOT-23-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Signal processing, industrial, power management, portable equipment, consumer electronics products
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT2222ALT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBT2222ALT1G 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 225 mW, 600 mA, 300 hFE
|
||
MMBT2222ALT3G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBT2222ALT3G 双极性晶体管, NPN, 40V SOT-23, 整卷
|
||
MMBT2222AM3T5G
|
ON Semiconductor | 功能相似 | SOT-723-3 |
ON SEMICONDUCTOR MMBT2222AM3T5G 单晶体管 双极, NPN, 40 V, 300 MHz, 265 mW, 600 mA, 35 hFE
|
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