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Model MMBT2222AM3T5G

Description ON SEMICONDUCTOR MMBT2222AM3T5G 单晶体管双极, NPN, 40 V, 300 MHz, 265 mW, 600 mA, 35 hFE

Brand: ON Semiconductor

Packaging SOT-723-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/frequency:	300 MHz
Technical parameters/number of pins:	3
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	265 mW
Technical parameters/breakdown voltage (collector emitter):	40 V
Technical parameters/Maximum allowable collector current:	0.6A
Technical parameters/minimum current amplification factor (hFE):	100 @150mA, 10V
Technical parameters/maximum current amplification factor (hFE):	35 @0.1mA, 10V
Technical parameters/rated power (Max):	265 mW
Technical parameters/DC current gain (hFE):	35
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	640 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-723-3
Dimensions/Length:	1.2 mm
Dimensions/Width:	0.8 mm
Dimensions/Height:	0.5 mm
Dimensions/Packaging:	SOT-723-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17
Customs information/ECCN code:	EAR99

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