Technical parameters/frequency: | 300 MHz |
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Technical parameters/rated voltage (DC): | 40.0 V |
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Technical parameters/rated current: | 600 mA |
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Technical parameters/number of pins: | 3 |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 225 mW |
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Technical parameters/breakdown voltage (collector emitter): | 40 V |
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Technical parameters/Maximum allowable collector current: | 0.6A |
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Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 10V |
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Technical parameters/rated power (Max): | 300 mW |
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Technical parameters/DC current gain (hFE): | 100 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 300 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 3.04 mm |
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Dimensions/Width: | 1.4 mm |
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Dimensions/Height: | 1.01 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT2222ALT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR MMBT2222ALT1G 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 225 mW, 600 mA, 300 hFE
|
||
SMMBT2222ALT3G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
通用晶体管 General Purpose Transistors
|
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