Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 50.0 mA
Technical parameters/drain source resistance: 60 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 225 mW
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/breakdown voltage of gate source: 30.0 V
Technical parameters/breakdown voltage: 30 V
Technical parameters/Input capacitance (Ciss): 14pF @15V(Vds)
Technical parameters/rated power (Max): 225 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 225 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBF4392
|
ON Semiconductor | 类似代替 | SOT-23-3 |
MMBF4392 结型n沟道场效应管 30V 75MA SOT23 代码 6K
|
||
MMBF4392LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR MMBF4392LT1G 晶体管, JFET, JFET, 30 V, 25 mA, 75 mA, -5 V, SOT-23, JFET
|
||
MMBF4392_NL
|
Fairchild | 功能相似 | SOT-23 |
N-Channel Switch
|
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