Technical parameters/drain source resistance: 60 Ω
Technical parameters/dissipated power: 350 mW
Technical parameters/breakdown voltage: 30 V
Technical parameters/Input capacitance (Ciss): 14pF @20V(Vds)
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.92 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.93 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2014/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBF4392
|
ON Semiconductor | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBF4392 晶体管, JFET, JFET, -30 V, 25 mA, 75 mA, -5 V, SOT-23, JFET
|
||
MMBF4392LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR MMBF4392LT1G 晶体管, JFET, JFET, 30 V, 25 mA, 75 mA, -5 V, SOT-23, JFET
|
||
MMBF4393LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR MMBF4393LT1G 晶体管, JFET, JFET, 30 V, 5 mA, 30 mA, -3 V, SOT-23, JFET
|
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