Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 50.0 mA
Technical parameters/halogen-free state: Halogen Free
Technical parameters/breakdown voltage: -30.0 V|30 V
Technical parameters/drain source resistance: 60 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 225 mW
Technical parameters/input capacitance: 14 pF
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/breakdown voltage of gate source: 30 V
Technical parameters/Input capacitance (Ciss): 14pF @15V(Vds)
Technical parameters/rated power (Max): 225 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 225 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.94 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial, Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBF4392
|
ON Semiconductor | 类似代替 | SOT-23-3 |
MMBF4392 结型n沟道场效应管 30V 75MA SOT23 代码 6K
|
||
MMBF4392LT1
|
ON Semiconductor | 类似代替 | SOT-23-3 |
JFET开关晶体管 JFET Switching Transistors
|
||
|
|
Freescale | 类似代替 |
JFET的开关 JFETs Switching
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review