Technical parameters/frequency: 50 MHz
Technical parameters/dissipated power: 1.75 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 40 @4A, 1V
Technical parameters/rated power (Max): 1.75 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1750 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.6 mm
External dimensions/width: 6.1 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSH44H11TF
|
ON Semiconductor | 完全替代 | TO-252-3 |
NPN 1.75 W 80 V 8 A 表面贴装 外延硅 晶体管 - TO-252-3
|
||
KSH44H11TM
|
ON Semiconductor | 完全替代 | TO-252-3 |
Trans GP BJT NPN 80V 8A 3Pin(2+Tab) DPAK T/R
|
||
MJD44H11TM
|
ON Semiconductor | 完全替代 | TO-252-3 |
单晶体管 双极, 通用, NPN, 80 V, 50 MHz, 20 W, 8 A, 60 hFE
|
||
MJD44H11TM
|
Fairchild | 完全替代 | TO-252-3 |
单晶体管 双极, 通用, NPN, 80 V, 50 MHz, 20 W, 8 A, 60 hFE
|
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