Technical parameters/frequency: 50 MHz
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 1.75 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 40 @4A, 1V
Technical parameters/rated power (Max): 1.75 W
Technical parameters/DC current gain (hFE): 60
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1750 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSH44H11TF
|
ON Semiconductor | 类似代替 | TO-252-3 |
通用电源和开关 General Purpose Power and Switching
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KSH44H11TM
|
ON Semiconductor | 类似代替 | TO-252-3 |
NPN外延硅晶体管 NPN Epitaxial Silicon Transistor
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MJD44H11TF
|
Fairchild | 完全替代 | TO-252-3 |
ON Semiconductor MJD44H11TF , NPN 晶体管, 8 A, Vce=80 V, HFE:40, 1 MHz, 3引脚 DPAK (TO-252)封装
|
||
MJD44H11TF
|
ON Semiconductor | 完全替代 | TO-252-3 |
ON Semiconductor MJD44H11TF , NPN 晶体管, 8 A, Vce=80 V, HFE:40, 1 MHz, 3引脚 DPAK (TO-252)封装
|
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