Technical parameters/breakdown voltage (collector emitter): | 80 V |
|
Technical parameters/minimum current amplification factor (hFE): | 40 @4A, 1V |
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Technical parameters/rated power (Max): | 1.75 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 1750 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
|
Dimensions/Packaging: | TO-252-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSH44H11TF
|
ON Semiconductor | 完全替代 | TO-252-3 |
NPN 1.75 W 80 V 8 A 表面贴装 外延硅 晶体管 - TO-252-3
|
||
MJD44H11TF
|
Fairchild | 完全替代 | TO-252-3 |
ON Semiconductor MJD44H11TF , NPN 晶体管, 8 A, Vce=80 V, HFE:40, 1 MHz, 3引脚 DPAK (TO-252)封装
|
||
MJD44H11TF
|
ON Semiconductor | 完全替代 | TO-252-3 |
ON Semiconductor MJD44H11TF , NPN 晶体管, 8 A, Vce=80 V, HFE:40, 1 MHz, 3引脚 DPAK (TO-252)封装
|
||
MJD44H11TM
|
ON Semiconductor | 完全替代 | TO-252-3 |
单晶体管 双极, 通用, NPN, 80 V, 50 MHz, 20 W, 8 A, 60 hFE
|
||
MJD44H11TM
|
Fairchild | 完全替代 | TO-252-3 |
单晶体管 双极, 通用, NPN, 80 V, 50 MHz, 20 W, 8 A, 60 hFE
|
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